Jae Gwang Um,: search on Z-Library

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1

A Driving Method of Pixel Circuit Using a-IGZO TFT for Suppression of Threshold Voltage Shift in AMLED Displays

Shin, Woo-Sul, Ahn, Hyun-A, Na, Jun-Seok, Hong, Seong-Kwan, Kwon, Oh-Kyong, Lee, Ji-Hun, Um, Jae Gwang, Jang, Jin, Kim, Sung-Hwan, Lee, Jeong-Soo

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 666 KB

english, 2017

2

Fast Threshold Voltage Compensation AMOLED Pixel Circuit using Secondary Gate Effect of Dual Gate a-IGZO TFTs

Jeon, C.H., Um, Jae Gwang, Mativenga, Mallory, Jang, Jin

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.05 MB

english, 2016

3

64-3: Distinguished Student Paper : Bulk Accumulation Oxide TFTs for Flexible AMOLED Display with High Yield Integrated Gate Driver

Um, Jae Gwang, Geng, Di, Mativenga, Mallory, Jang, Jin

Journal:

SID Symposium Digest of Technical Papers

Year:

2016

File:

PDF, 4.56 MB

2016

4

Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time

Gwang Um, Jae, Mativenga, Mallory, Migliorato, Piero, Jang, Jin

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 5.94 MB

english, 2012

5

Active-Matrix GaN µ-LED Display Using Oxide Thin-Film Transistor Backplane and Flip Chip LED Bonding

Um, Jae Gwang, Jeong, Duk Young, Jung, Younghun, Moon, Joon Kwon, Jung, Yeon Hong, Kim, Seonock, Kim, Sung Hwan, Lee, Jeong Soo, Jang, Jin

Journal:

Advanced Electronic Materials

Year:

2018

Language:

english

File:

PDF, 3.07 MB

english, 2018

6

Saponins, Especially Platyconic Acid A, from Platycodon grandiflorum Reduce Airway Inflammation in Ovalbumin-Induced Mice and PMA-Exposed A549 Cells

Choi, Jae Ho, Jin, Sun Woo, Kim, Hyung Gyun, Choi, Chul Yung, Lee, Hyun Sun, Ryu, Shi Yong, Chung, Young Chul, Hwang, Young Jung, Um, Yeon Ji, Jeong, Tae Cheon, Jeong, Hye Gwang

Journal:

Journal of Agricultural and Food Chemistry

Year:

2015

Language:

english

File:

PDF, 2.18 MB

english, 2015

7

Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

Chun, Minkyu, Um, Jae Gwang, Park, Min Sang, Chowdhury, Md Delwar Hossain, Jang, Jin

Journal:

Year:

2016

Language:

english

File:

PDF, 2.41 MB

english, 2016

8

66-4: High Brightness Active Matrix Micro-LEDs with LTPS TFT Backplane

Kim, Hyo-Min, Um, Jae Gwang, Lee, Suhui, Jeong, Duk Young, Jung, Younghun, Lee, Sang Hern, Jeong, Tak, Joo, Jaeyoung, Hur, Jeongwook, Choi, Jong Hwa, Kwak, Joon Seop, Jang, Jin

Journal:

SID Symposium Digest of Technical Papers

Year:

2018

Language:

english

File:

PDF, 1.74 MB

english, 2018

9

Characterization and Modeling of a-IGZO TFTs

Migliorato, Piero, Chowdhury, Md Delwar Hossain, Jae Gwang Um,, Manju Seok,, Martivenga, Mallory, Jin Jang,

Journal:

Journal of Display Technology

Year:

2015

Language:

english

File:

PDF, 2.03 MB

english, 2015

10

Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

Migliorato, Piero, Delwar Hossain Chowdhury, Md, Gwang Um, Jae, Seok, Manju, Jang, Jin

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 1.80 MB

english, 2012

11

Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress

Um, Jae Gwang, Mativenga, Mallory, Jang, Jin

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.44 MB

english, 2013

12

Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 °C

Um, Jae Gwang, Jang, Jin

Journal:

Applied Physics Letters

Year:

2018

Language:

english

File:

PDF, 2.54 MB

english, 2018

13

P-52: High-Gain Source Followers Driven by Corbino Oxide TFTs for Integrated Display Data Drivers

Um, Jae Gwang, Geng, Di, Mativenga, Mallory, Mruthyunjaya, Ravi K., Heiler, Gregory N., Tredwell, Timothy J., Jang, Jin

Journal:

SID Symposium Digest of Technical Papers

Year:

2015

Language:

english

File:

PDF, 895 KB

english, 2015

14

Effect of Doping Fluorine in Offset Region on Performance of Coplanar a-IGZO TFTs

Rahaman, Abidur, Billah, Mohammad Masum, Um, Jae Gwang, Hasan, Md Mehedi, Jang, Jin

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 1.26 MB

english, 2018

15

Low-Frequency Noise Properties in Double-Gate Amorphous InGaZnO Thin-Film Transistors Fabricated by Back-Channel-Etch Method

Jeong, Chan-Yong, Kim, Jong In, Lee, Jong-Ho, Um, Jae-Gwang, Jang, Jin, Kwon, Hyuck-In

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.34 MB

english, 2015

16

Bending Stress Induced Performance Change in Plastic Oxide Thin-film Transistor and Recovery by Annealing at 300°C

Hasan, Md Mehedi, Billah, Mohammad Masum, Naik, Mude Narendra, Um, Jae Gwang, Jang, Jin

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 874 KB

english, 2017

17

Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics

Kim, Yong-Hwan, Lee, Eunji, Um, Jae Gwang, Mativenga, Mallory, Jang, Jin

Journal:

Scientific Reports

Year:

2016

Language:

english

File:

PDF, 1.57 MB

english, 2016

18

P-76: Effect of a-IGZO Thickness Variation on Device Uniformity and Drain Currents for Dual and Single Gate Driving TFTs

Billah, Mohammad Masum, Hasan, Md Mehedi, Jeong, Duk Young, Um, Jae Gwang, Jang, Jin

Journal:

SID Symposium Digest of Technical Papers

Year:

2017

Language:

english

File:

PDF, 939 KB

english, 2017

19

Enhanced Operation of Back-Channel-Etched a-IGZO TFTs by Fluorine Treatment during Source/Drain Wet-Etching

Park, Young Chul, Um, Jae Gwang, Mativenga, Mallory, Jang, Jin

Journal:

ECS Journal of Solid State Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.04 MB

english, 2017

20

Control of O-H bonds at a-IGZO/SiO 2 interface by long time thermal annealing for highly stable oxide TFT

Jeon, Jae Kwon, Um, Jae Gwang, Lee, Suhui, Jang, Jin

Journal:

Year:

2017

Language:

english

File:

PDF, 6.88 MB

english, 2017

21

P-29: Flexible Gate Driver for Bendable AMOLED Display with Homojunction Oxide TFTs

Um, Jae Gwang, Geng, Di, Jeon, Jae Kwon, Chen, Yuanfeng, Mativenga, Mallory, Jang, Jin

Journal:

SID Symposium Digest of Technical Papers

Year:

2017

Language:

english

File:

PDF, 1012 KB

english, 2017

22

Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

Chowdhury, Md Delwar Hossain, Um, Jae Gwang, Jang, Jin

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.30 MB

english, 2014

23

Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

Um, Jae Gwang, Mativenga, Mallory, Migliorato, Piero, Jang, Jin

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 1.81 MB

english, 2015

24

Field-induced carrier generation in amorphous-InGaZnO4 thin-film transistors

Gwang Um, Jae, Mativenga, Mallory, Migliorato, Piero, Jang, Jin

Journal:

Solid State Communications

Year:

2014

Language:

english

File:

PDF, 2.60 MB

english, 2014

25

Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors

Jeong, Chan-Yong, Lee, Daeun, Song, Sang-Hun, Kim, Jong In, Lee, Jong-Ho, Um, Jae-Gwang, Jang, Jin, Kwon, Hyuck-In

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2015

Language:

english

File:

PDF, 1.46 MB

english, 2015

26

Impact of Source-to-Gate and Drain-to-Gate Overlap Lengths on Performance of Inverted Staggered a-IGZO TFTs With an Etch Stopper

Mativenga, Mallory, Haque, Farjana, Um, Jae Gwang, Siddik, Abu Bakar

Journal:

IEEE Transactions on Electron Devices

Year:

2020

File:

PDF, 2.62 MB

2020

27

Effect of SiO2 and SiO2/SiNx Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

Chowdhury, Md Delwar Hossain, Mativenga, Mallory, Um, Jae Gwang, Mruthyunjaya, Ravi K., Heiler, Gregory N., Tredwell, Timothy John, Jang, Jin

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.83 MB

english, 2015

28

P-7: High Speed a-IGZO TFT-based Gate Driver by using Back Channel Etched Structure

Um, Jae Gwang, Mativenga, Mallory, Geng, Di, Li, Xiuling, Jang, Jin

Journal:

SID Symposium Digest of Technical Papers

Year:

2014

Language:

english

File:

PDF, 883 KB

english, 2014

29

P-78: Calibration of a-InGaZnO Thin Film Transistors with Various Channel Lengths using TCAD Simulation

Tak, Nam-Kyun, Lee, Won-Seok, Kim, Sae-Han, Choi, In-Chol, Kim, Jin-Young, Han, Ji-Ung, Choi, Jin-Hyung, Hwang, Man-Gyu, Um, Jae Gwang, Lee, Suhui, Billah, Mohammad Masum, Jang, Jin

Journal:

SID Symposium Digest of Technical Papers

Year:

2017

Language:

english

File:

PDF, 3.12 MB

english, 2017

30

Circular Structure for High Mechanical Bending Stability of a-IGZO TFTs

Mativenga, Mallory, Jun, Haeyeon, Choe, Younwoo, Um, Jae Gwang, Jang, Jin

Journal:

IEEE Journal of the Electron Devices Society

Year:

2017

Language:

english

File:

PDF, 946 KB

english, 2017

31

Thermal Stability Improvement of Back Channel Etched a-IGZO TFTs by Using Fluorinated Organic Passivation

Park, Young Chul, Um, Jae Gwang, Mativenga, Mallory, Jang, Jin

Journal:

ECS Journal of Solid State Science and Technology

Year:

2018

Language:

english

File:

PDF, 965 KB

english, 2018

32

Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

Um, Jae Gwang, Mativenga, Mallory, Migliorato, Piero, Jang, Jin

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 2.05 MB

english, 2014

33

P.22: Improving Switching Characteristics of Amorphous-InGaZnO 4 Thin-Film Transistors by Dual-Gate Driving

Mativenga, Mallory, Geng, Di, Um, Jae Gwang, Seok, Manju, Kang, Dong Han, Jang, Jin, Mruthyunjaya, Ravi K., Heiler, Gregory N., Tredwell, Timothy J.

Journal:

SID Symposium Digest of Technical Papers

Year:

2013

Language:

english

File:

PDF, 913 KB

english, 2013

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